Control of p- and n-type conductivities in P doped ZnO thin films by using radio-frequency sputtering -: art. no. 132114

被引：59
|
作者：
Yu, ZG
Wu, P
Gong, H
机构：
[1] Inst High Performance Comp, Singapore 117528, Singapore
[2] Natl Univ Singapore, Dept Mat Sci Engn, Singapore 119260, Singapore
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期
关键词：
D O I：
10.1063/1.2192089
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The conduction type of P doped ZnO thin films using Zn3P2 dopant source can be controlled by adjusting the oxygen partial pressure by means of radio-frequency sputtering. Under an optimal oxygen partial pressure of 5%, p-type ZnO thin films were obtained with a hole concentration of 1.93x10(16)-3.84x10(19) cm(-3). Under a growth condition of extremely low oxygen partial pressure, P doped ZnO thin films exhibit n-type conduction with a hole concentration of 8.34x10(17)-3.1x10(19) cm(-3). This research not only achieved significant technical advance in the fabrication of p-type ZnO but also gained critical advance in fundamental understanding of the governing mechanism of p-type ZnO. (c) 2006 American Institute of Physics.
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