Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

被引：1

作者：

Yoshikawa, M

Nemoto, N

Itoh, H

Nashiyama, I

Okumura, H

Misawa, S

Yoshida, S

机构：

[1] NIHON UNIV,FUNABASHI,CHIBA 274,JAPAN

[2] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 47卷 / 03期

关键词：

thermal annealing; isochronal annealing; irradiation; C-V; gamma-rays; interface trap density; trapped charges in oxygen;

D O I：

10.1016/S0921-5107(97)00034-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermal annealing of interface traps induced by Co-60 gamma-ray irradiation has been studied for cubic silicon carbide (3C-SiC) metal-oxide-semiconductor (MOS) structures using high-frequency capacitance-voltage (C-V) method. The isochronal annealing behaviors of interface traps and trapped charges in oxides induced by irradiation are found to decrease with increasing temperature. The annealing behaviors up to 400 degrees C are analyzed and the activation energies are determined using the isochronal annealing formula derived from the rate equation of the chemical reaction. The annealings of the interface traps and trapped charges in oxides near the 3C-SiC/SiO2 interface are discussed in terms of the activation energies obtained. (C) 1997 Elsevier Science S.A.

引用

页码：218 / 223

页数：6

共 25 条

[1]

ATTIX FH, 1984, INTRO RADIOLOGICAL P, V11, P61

[2] BEHAVIOR OF INVERSION-LAYERS IN 3C SILICON-CARBIDE [J].