Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes

被引：40

作者：

Han, Sang-Heon ^{[1
]}

Lee, Dong-Yul ^{[1
]}

Shim, Hyun-Wook ^{[1
]}

Lee, Jeong Wook ^{[1
]}

Kim, Dong-Joon ^{[1
]}

Yoon, Sukho ^{[1
]}

Kim, Young Sun ^{[1
]}

Kim, Sung-Tae ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, LED Business, Yongin 446711, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 25期

关键词：

FREESTANDING GAN; JUNCTION DIODES; GROWTH; FILMS; MG;

D O I：

10.1063/1.4812810

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a high efficiency and an improvement of the electrical properties in InGaN/GaN multiple quantum well light-emitting diodes (LEDs) using intentionally formed V-shaped pits. Efficiency droop behaviors are measured and LEDs with V-shaped pits act like LEDs with a low dislocation density. The reverse voltage at -10 mu A of LEDs with V-shaped pits shows -120 V, which is comparable to p-i-n rectifiers grown on a free-standing GaN, and reverse leakage current is decreased indicating electrical passivation of dislocation. A calculated diode ideality factor shows that electron tunneling at low forward voltage is suppressed in LEDs with V-shaped pits. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 20 条

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