Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi1-xSbx)2Te3 Topological Insulators

被引：2

作者：

Galeeva, A. V. ^{[1
]}

Gomanko, M. A. ^{[1
]}

Tamm, M. E. ^{[2
]}

Yashina, L. V. ^{[2
]}

Danilov, S. N. ^{[3
]}

Ryabova, L. I. ^{[2
]}

Khokhlov, D. R. ^{[1
,4
]}

机构：

[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia

[2] Moscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, Russia

[3] Regensburg Univ, D-93053 Regensburg, Germany

[4] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia

来源：

SEMICONDUCTORS | 2019年 / 53卷 / 01期

基金：

俄罗斯科学基金会;

关键词：

RELAXATION;

D O I：

10.1134/S1063782619010068

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The mobility of surface charge carriers is estimated based on an analysis of the photoelectromagnetic effect in three-dimensional (Bi1 -xSbx)(2)Te-3 (0 x 0.55) topological insulators. A high degree of degeneracy of the carrier gas in combination with a low energy of the exciting terahertz quantum provide a nonequilibrium process associated exclusively with thermal heating of the carrier. Under these conditions, the photovoltage is determined by the mobility gradient of the surface and bulk carriers. The photovoltage and, consequently, the mobility gradient disappear completely with an increase in the bulk mobility up to 10(5) cm(2) V-1 s(-1). Photovoltage is clearly observed in the samples with comparatively low bulk mobility under the same experimental conditions.

引用

页码：37 / 41

页数：5

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