In-plane resistivity of La-doped Bi2Sr2CuO6+delta single crystals

被引：4
|
作者：
Si, WD
Xiong, JW
Zhao, ZX
机构：
[1] National Lab. for Superconductivity, Institute of Physics, Chinese Academy of Sciences
来源：
PHYSICA C | 1997年 / 282卷
关键词：
D O I：
10.1016/S0921-4534(97)00752-1
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The in-plane resistivity (rho(ab)) of series of Bi2Sr2-xLaxCuOy single crystals with the highest T-c(rho=0) up to 23K has been studied between 4.2 similar to 300K over a wide composition range from the underdoped insulator to the overdoped superconductor. The observed superconductor-insulator (ST) transition is consistent with the two dimensional (2D) localization We found for the first time a universal dR(sheet)/dT behavior among all high temperature superconductors (NTS) in the underdoped regime. Due to a possible dimensional crossover, a change in the electronic state with the appearance of normal electrons in the overdoped regime is discussed.
引用
收藏
页码：1187 / 1188
页数：2
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