Characterization of micro-pixelated InGaP/AlGaInP quantum well structures

被引：3

作者：

Boussadi, Younes ^{[1
]}

Rochat, Nevine ^{[1
]}

Barnes, Jean-Paul ^{[1
]}

Ben Bakir, Badhise ^{[1
]}

Ferrandis, Philippe ^{[2
]}

Masenelli, Bruno ^{[3
]}

Licitra, Christophe ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France

[2] Univ Grenoble Alpes, Univ Toulon, CNRS, Inst Neel, Grenoble, France

[3] Univ Lyon, INSA Lyon, Inst Nanotechnol Lyon INL, ECL,UCBL,CPE,CNRS,UMR5270, Villeurbanne, France

来源：

LIGHT-EMITTING DEVICES, MATERIALS, AND APPLICATIONS XXIV | 2020年 / 11302卷

关键词：

micro-LED; micro-Photoluminescence; Cathodoluminescence; TOF-SIMS; InGaP; AlGaInP;

D O I：

10.1117/12.2544350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a structural and optical study on micro-pixelated InGaP/AlGaInP quantum well structures with different pixel sizes down to 6 mu m and a red emission at 636 nm. Temperature-dependent photoluminescence and cathodoluminescence cartographies were coupled to observe the emission homogeneity at the pixel scale and to study the impact of non-radiative recombinations from sidewall defects. We deduced that micro-LEDs are impacted by surface recombination and we estimated the thermal quenching of photoluminescence related to defects. At low temperatures, a stronger luminescence was also observed from the pixel edges due to the diffusion coefficient or a geometric effect. Finally, the study was completed by a TOF-SIMS analysis in order to provide information about material composition homogeneity.

引用

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