Characterization of micro-pixelated InGaP/AlGaInP quantum well structures

被引：3

作者：

Boussadi, Younes ^{[1
]}

Rochat, Nevine ^{[1
]}

Barnes, Jean-Paul ^{[1
]}

Ben Bakir, Badhise ^{[1
]}

Ferrandis, Philippe ^{[2
]}

Masenelli, Bruno ^{[3
]}

Licitra, Christophe ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France

[2] Univ Grenoble Alpes, Univ Toulon, CNRS, Inst Neel, Grenoble, France

[3] Univ Lyon, INSA Lyon, Inst Nanotechnol Lyon INL, ECL,UCBL,CPE,CNRS,UMR5270, Villeurbanne, France

来源：

LIGHT-EMITTING DEVICES, MATERIALS, AND APPLICATIONS XXIV | 2020年 / 11302卷

关键词：

micro-LED; micro-Photoluminescence; Cathodoluminescence; TOF-SIMS; InGaP; AlGaInP;

D O I：

10.1117/12.2544350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a structural and optical study on micro-pixelated InGaP/AlGaInP quantum well structures with different pixel sizes down to 6 mu m and a red emission at 636 nm. Temperature-dependent photoluminescence and cathodoluminescence cartographies were coupled to observe the emission homogeneity at the pixel scale and to study the impact of non-radiative recombinations from sidewall defects. We deduced that micro-LEDs are impacted by surface recombination and we estimated the thermal quenching of photoluminescence related to defects. At low temperatures, a stronger luminescence was also observed from the pixel edges due to the diffusion coefficient or a geometric effect. Finally, the study was completed by a TOF-SIMS analysis in order to provide information about material composition homogeneity.

引用

页数：8

共 19 条

[1] Micro-LEDs, a Manufacturability Perspective [J].

Ding, Kai ;

Avrutin, Vitaliy ;

Izyumskaya, Natalia ;

Ozgur, Umit ;

Morkoc, Hadis .

APPLIED SCIENCES-BASEL, 2019, 9 (06)

[2]

Dingemans G, 2010, IEEE PHOT SPEC CONF

[3]

Geum D.-M., 2019, NANOSCALE

[4] Development and Fabrication of AlGaInP-Based Flip-Chip Micro-LEDs [J].

Horng, Ray-Hua ;

Chien, Huan-Yu ;

Chen, Ken-Yen ;

Tseng, Wei-Yu ;

Tsai, Yu-Ting ;

Tarntair, Fu-Gow .

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 6 (01) :475-479

[5] Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs [J].

Hwang, David ;

Mughal, Asad ;

Pynn, Christopher D. ;

Nakamura, Shuji ;

DenBaars, Steven P. .

APPLIED PHYSICS EXPRESS, 2017, 10 (03)

[6] Effective suppression of surface recombination of AlGaInP light-emitting diodes by sulfur passivation [J].

Jeng, Ming-Jer ;

Chang, Yuan-Hsiao ;

Chang, Liann-Be ;

Huang, Mei-Jiau ;

Lin, Jia-Chuan .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (12-16) :L291-L293

[7] Optical investigation of GaInP-AlGaInP quantum-well layers for high-power red laser diodes [J].

Kim, Chang Zoo ;

Choi, Je Hyuk ;

Song, Keun-Man ;

Shin, Chan Soo ;

Ko, Chul Gi ;

Kim, Hogyoung .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 62 (09) :1301-1306

[8] Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs [J].

Kuo, CW ;

Su, YK ;

Lin, HH ;

Tsia, CY .

SOLID-STATE ELECTRONICS, 1998, 42 (11) :1933-1937

[9] Temperature dependence of photoluminescence intensity from AlGaInP/GaInP multi-quantum well laser structures [J].

Liu, CY ;

Yuan, S ;

Dong, JR ;

Chua, SJ .

JOURNAL OF CRYSTAL GROWTH, 2004, 268 (3-4) :426-431

[10] N2-H2 remote plasma nitridation for GaAs surface passivation [J].

Losurdo, M ;

Capezzuto, P ;

Bruno, G ;

Perna, G ;

Capozzi, V .

APPLIED PHYSICS LETTERS, 2002, 81 (01) :16-18

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