Excitonic characteristics of wurtzite InGaN staggered quantum wells for light-emitting diode applications

被引：4

作者：

Xia, Congxin ^{[1
,2
]}

Zhang, Heng ^{[1
]}

Jia, Yalei ^{[1
]}

Wei, Shuyi ^{[1
]}

Jia, Yu ^{[2
]}

机构：

[1] Henan Normal Univ, Dept Phys, Xinxiang 453007, Henan, Peoples R China

[2] Zhengzhou Univ, Sch Phys & Engn, Ctr Clean Energy & Quantum Struct, Zhengzhou 450001, Henan, Peoples R China

来源：

SCRIPTA MATERIALIA | 2013年 / 68卷 / 3-4期

基金：

中国国家自然科学基金;

关键词：

InGaN; Quantum well; Exciton; Built-in electric field; Optical properties; PHASE-SEPARATION; STATES;

D O I：

10.1016/j.scriptamat.2012.10.020

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Based on the effective-mass approximation, our calculation shows that for the wurtzite (WZ) In0.2Ga0.8N/InyGa1-yN symmetric staggered quantum well (QW) with In content y > 0.1, the stepped barrier effects are insensible to exciton states. However, for the WZ In0.2Ga0.8N/InyGa1-yN asymmetric staggered QWs, the maximum values of the exciton recombination rate appear when the In0.2Ga0.8N well layer is smaller than the InyGa1-yN layer thickness for In concentrations y < 0.1. The studies are useful in the design of high-performance blue and green light-emitting diodes. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：203 / 206

页数：4

共 27 条

[1] Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes [J].

Arif, Ronald A. ;

Ee, Yik-Khoon ;

Tansu, Nelson .

APPLIED PHYSICS LETTERS, 2007, 91 (09)

[2] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[3] Band gap of InxGa1-xN: A first principles analysis [J].

Cesar, Mathieu ;

Ke, Youqi ;

Ji, Wei ;

Guo, Hong ;

Mi, Zetian .

APPLIED PHYSICS LETTERS, 2011, 98 (20)

[4] Numerical simulation of asymptotic states of the damped Kuramoto-Sivashinsky equation [J].

Gomez, Hector ;

Paris, Jose .

PHYSICAL REVIEW E, 2011, 83 (04)

[5]

Horiuchi N., 2010, NAT PHOTONICS, V4, P738, DOI [10.1038/nphoton.2010.244, DOI 10.1038/nphoton.2010.244, DOI 10.1038/NPHOTON.2010.244]

[6] Enhanced Performance of Nitride-Based Blue LED With Step-Stage MQW Structure [J].

Hsu, Hsiao-Chiu ;

Su, Yan-Kuin ;

Huang, Shyh-Jer ;

Tseng, Chi-Yao ;

Cheng, Chiao-Yang ;

Chen, Kuan-Chun .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (05) :287-289

[7] Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells [J].

Leroux, M ;

Grandjean, N ;

Laügt, M ;

Massies, J ;

Gil, B ;

Lefebvre, P ;

Bigenwald, P .

PHYSICAL REVIEW B, 1998, 58 (20) :13371-13374

[8] Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions [J].

Li, X. ;

Okur, S. ;

Zhang, F. ;

Hafiz, S. A. ;

Avrutin, V. ;

Ozgur, U. ;

Morkoc, H. ;

Jarasiunas, K. .

APPLIED PHYSICS LETTERS, 2012, 101 (04)

[9] Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well [J].

Liao, Chih-Teng ;

Tsai, Miao-Chan ;

Liou, Bo-Ting ;

Yen, Sheng-Horng ;

Kuo, Yen-Kuang .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (06)

[10] Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells [J].

Lin, YS ;

Ma, KJ ;

Hsu, C ;

Feng, SW ;

Cheng, YC ;

Liao, CC ;

Yang, CC ;

Chou, CC ;

Lee, CM ;

Chyi, JI .

APPLIED PHYSICS LETTERS, 2000, 77 (19) :2988-2990

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