Variation Mitigation Technique in SRAM Cell using Adaptive Body Bias

被引：0

作者：

Kushwaha, S. ^{[1
]}

Prasad, S. ^{[1
]}

Islam, A. ^{[1
]}

机构：

[1] Deemed Univ, Dept Elect & Commun Engn, Birla Inst Technol, Ranchi, Jharkhand, India

来源：

PROCEEDINGS OF THE 2012 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, DEVICES AND INTELLIGENT SYSTEMS (CODLS) | 2012年

关键词：

Variability; SRAM; RSNM; RDF; DIBL; WRITE OPERATION; DESIGN; VOLTAGE; NOISE;

D O I：

暂无

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

This paper presents a circuit technique for designing a variability aware SRAM cell operable at near threshold region. The architecture of the proposed cell is similar to the standard 6T SRAM cell with the exception that DTMOS is used for the access FETs and DSBB (dynamically swapped body bias) scheme is used for feedback and feed-forward inverters of the cell. In this work, various design metrics of the proposed design are assessed and compared with conventional 6T at iso-device area.

引用

页码：117 / 120

页数：4

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