Electronic structure of YbNiX3 (X=Si, Ge) studied by hard X-ray photoemission spectroscopy

被引:2
作者
Sato, Hitoshi [1 ]
Utsumi, Yuki [2 ]
Kodama, Junichi [3 ]
Nagata, Heisuke [3 ]
Avila, Marcos A. [4 ]
Ribeiro, Raquel A. [4 ]
Umeo, Kazunori [5 ]
Takabatake, Toshiro [6 ,7 ]
Mimura, Kojiro [8 ]
Motonami, Satoru [8 ]
Anzai, Hiroaki [8 ]
Ueda, Shigenori [9 ]
Shimada, Kenya [1 ]
Namatame, Hirofumi [1 ]
Taniguchi, Masaki [1 ,3 ]
机构
[1] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7390046, Japan
[2] Max Planck Inst Chem Phys Solids, D-01187 Dresden, Germany
[3] Hiroshima Univ, Grad Sch Sci, Higashihiroshima 7398526, Japan
[4] Univ Fed ABC, Ctr Ciencias Nat & Humanas, BR-09210580 Santo Andre, SP, Brazil
[5] Hiroshima Univ, N BARD, Cryogen & Instrumental Anal Div, Higashihiroshima 7398526, Japan
[6] Hiroshima Univ, AdSM, Dept Quantum Matter, Higashihiroshima 7398530, Japan
[7] Hiroshima Univ, Inst Adv Mat Res, Higashihiroshima 7398530, Japan
[8] Osaka Prefecture Univ, Grad Sch Engn, Sakai, Osaka 5998531, Japan
[9] Natl Inst Mat Sci, Synchrotron Xray Stn, SPring 8, Kobe, Hyogo 6795148, Japan
来源
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 6 | 2015年 / 12卷 / 06期
关键词
Kondo lattice; electronic structure; photoemission spectroscopy;
D O I
10.1002/pssc.201400312
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Electronic structure of the Kondo lattices YbNiX3 (X=Si, Ge) has been investigated by means of hard x-ray photoemission spectroscopy (HAXPES) with h nu = 5.95 keV. From the Yb 3d HAXPES spectra, the Yb valence in YbNiSi3 is estimated to be similar to 2.92, which is almost temperature-independent. On the other hand, the valence in YbNiGe3 is estimated to be 2.48 at 300 K, showing significant valence fluctuation, and gradually decreases to 2.41 at 20 K on cooling. The Ni 2p(3/2) and Yb3+ 4f peaks exhibit opposite energy shifts amounting to similar to 0.6 eV between YbNiSi3 and YbNiGe3. We propose a simple model for the electronic structure of YbNiX3 based on the HAXPES results.
引用
收藏
页码:620 / 623
页数:4
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