Evidence for ion irradiation induced dissociation and reconstruction of Si-H bonds in hydrogen-implanted silicon

被引：21

作者：

Di, Z. F. ^{[1
]}

Wang, Y. Q. ^{[1
]}

Nastasi, M. ^{[1
]}

Shao, L. ^{[2
]}

Lee, J. K. ^{[3
]}

Theodore, N. D. ^{[4
]}

机构：

[1] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[2] Texas A&M Univ, Dept Nucl Engn, College Stn, TX 77843 USA

[3] Univ Pittsburgh, Dept Mech Engn & Mat Sci, Pittsburgh, PA 15261 USA

[4] Freescale Semicond Inc, Analog & Mixed Signal Technol, Tempe, AZ 85284 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 10期

关键词：

D O I：

10.1063/1.2979686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observe that H-related chemical bonds formed in H-implanted Si will evolve under subsequent ion irradiation. During ion irradiation hydrogen is inclined to dissociate from simple H-related defect complexes (i.e., VHx and IHx), diffuse, and attach to vacancy-type defects resulting in new platelet formation, which facilitate surface blistering after annealing, a process completely inhibited in the absence of ion irradiation. The understanding of our results provides insight into the structure and stability of hydrogen-related defects in silicon. (c) 2008 American Institute of Physics.

引用

页数：3

共 28 条

[1] ION-BEAM-INDUCED HYDROGEN RELEASE FROM A-C-H - A BULK MOLECULAR RECOMBINATION MODEL [J].