Innovative second-generation Ba and Sr precursors for chemical vapor deposition of Ba1-xSrxTiO3 thin films

被引：7

作者：

Battiston, GA ^{[1
]}

Gerbasi, R

Carta, G

Marchetti, F

Pettinari, C

Rodriguez, A

Barreca, D

Maragno, C

Tondello, E

机构：

[1] ICIS, CNR, I-35127 Padua, Italy

[2] Univ Camerino, Dept Chem Sci, I-62032 Camerino, Italy

[3] Univ La Laguna, Dept Inorgan Chem, San Cristobal la Laguna 38200, Canary Isl, Spain

[4] Univ Padua, ISTM, CNR, I-35131 Padua, Italy

[5] Univ Padua, INSTM, Dept Chem, I-35131 Padua, Italy

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2006年 / 153卷 / 03期

关键词：

D O I：

10.1149/1.2160441

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Ba1-xSrxTiO3 (BST) thin films, appealing candidates for innovative applications in microelectronics, have been obtained by chemical vapor deposition using innovative second-generation Ba and Sr molecular precursors, namely, [Ba(thd)(2)(pmdien)(Meim)] (thdH = 2,2,6,6 - tetramethyl-3,5-heptanedione; pmdien = N, N, N', N", N"-pentamethyldiethylenetriamine- Meim = methylimidazole) and [Sr-2(thd)(4)(imH)(2)(EtOH)](imH = imidazole). Titanium tetraisopropoxide Ti((OPr)-Pr-i)(4) was used as the Ti source. Film preparation was carried out on quartz and Si(100) substrates at 450 degrees C under a nitrogen + oxygen atmosphere followed by annealing in air at temperatures up to 800 degrees C. The structural, compositional, and morphological evolution of the films was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, with particular focus on the interplay between the system properties and the processing conditions. The formation of nanophasic BST layers (crystallite size < 30 nm) required a minimum annealing temperature of 800 degrees C. (c) 2006 The Electrochemical Society.

引用

页码：F35 / F38

页数：4

共 21 条

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