Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching

被引:3
作者
Gylfason, Kristinn B. [1 ]
Fischer, Andreas C. [1 ]
Malm, B. Gunnar [2 ]
Radamson, Henry H. [2 ]
Belova, Lyubov M. [3 ]
Niklaus, Frank [1 ]
机构
[1] KTH Royal Inst Technol, Microsyst Technol Lab MST, SE-10044 Stockholm, Sweden
[2] KTH Royal Inst Technol, Integrated Devices & Circuits Lab IDC, SE-16440 Kista, Sweden
[3] KTH Royal Inst Technol, Engn Mat Phys Lab EMP, SE-10044 Stockholm, Sweden
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2012年 / 30卷 / 06期
关键词
BEAM; MICROFABRICATION; NANOSTRUCTURES; FABRICATION; BORON;
D O I
10.1116/1.4756947
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors study suitable process parameters, and the resulting pattern formation, in additive layer-by-layer fabrication of arbitrarily shaped three-dimensional (3D) silicon (Si) micro-and nanostructures. The layer-by-layer fabrication process investigated is based on alternating steps of chemical vapor deposition of Si and local implantation of gallium ions by focused ion beam writing. In a final step, the defined 3D structures are formed by etching the Si in potassium hydroxide, where the ion implantation provides the etching selectivity. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4756947]
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页数:4
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