Analysis of composition fluctuations in AlxGa1-xN

被引：16
|
作者：
Neubauer, B
Rosenauer, A
Gerthsen, D
Ambacher, O
Stutzmann, M
Albrecht, M
Strunk, HP
机构：
[1] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany
[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[3] Univ Erlangen Nurnberg, Inst Werkstoffwissensch, D-91058 Erlangen, Germany
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 59卷 / 1-3期
关键词：
decomposition; nitrides; transmission electron microscopy </kwdg*;
D O I：
10.1016/S0921-5107(98)00397-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Composition fluctuations in AlxGa1-xN-layers (x = 0.25 and 0.35) are investigated on an atomic scale by high-resolution transmission electron microscopy (HRTEM). The samples were grown by plasma induced molecular beam epitaxy on Al2O3 (0001). A strain state analysis of the cross-sectional HRTEM micrographs is performed with the digital analysis of lattice images (DALI) program package. Composition profiles on an atomic scale are derived by the measurement of the distances between intensity maxima positions in the HRTEM image. The analyses revealed different areas in the AlxGa1-xN-layers with either homogeneous or 'striped' contrast. Ln the striped areas the analyses indicate a strong decomposition that leads to the formation of self-organized superlattice structures. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：182 / 185
页数：4
相关论文
共 50 条
  • [41] Dependence of the refractive index of AlxGa1-xN on temperature and composition at elevated temperatures
    Tisch, U
    Meyler, B
    Katz, O
    Finkman, E
    Salzman, J
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) : 2676 - 2685
  • [42] Dependence of optical absorption spectra of the flat double nanoheterostructures AlxGa1-xN/GaN/AlxGa1-xN on their thickness and concentration
    Derevyanchuk, Oleksandr V.
    Kondryuk, Denys V.
    Kramar, Valeriy M.
    THIRTEENTH INTERNATIONAL CONFERENCE ON CORRELATION OPTICS, 2017, 10612
  • [43] Analysis of the carrier concentration for field emission from AlxGa1-xN
    Choi, TS
    Chung, MS
    APPLIED SURFACE SCIENCE, 2005, 251 (1-4) : 191 - 195
  • [44] Determination of alloy composition and residual stress for AlxGa1-xN/GaN epitaxial films
    Paduano, Q
    Weyburne, D
    Wang, SQ
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (02): : 821 - 824
  • [45] Composition and temperature dependent optical properties of AlxGa1-xN alloy by spectroscopic ellipsometry
    Liu, Yao
    Li, Qing Xuan
    Wan, Ling Yu
    Kucukgok, Bahadir
    Ghafari, Ehsan
    Ferguson, Ian T.
    Zhang, Xiong
    Wang, Shuchang
    Feng, Zhe Chuan
    Lu, Na
    APPLIED SURFACE SCIENCE, 2017, 421 : 389 - 396
  • [46] Dependence of field emission from AlxGa1-xN on the stoichiometric composition for x≤0.7
    Chung, MS
    Cutler, PH
    Miskovsky, NM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (01): : 418 - 421
  • [47] The activation energy for Mg acceptor in AlxGa1-xN alloys in the whole composition range
    Zhao, Chuan-Zhen
    Wei, Tong
    Chen, Li-Ying
    Wang, Sha-Sha
    Wang, Jun
    SUPERLATTICES AND MICROSTRUCTURES, 2017, 109 : 758 - 762
  • [48] Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range
    Wang, K.
    O'Donnell, K. P.
    Hourahine, B.
    Martin, R. W.
    Watson, I. M.
    Lorenz, K.
    Alves, E.
    PHYSICAL REVIEW B, 2009, 80 (12)
  • [49] Systematic measurement of AlxGa1-xN refractive indices
    Ozgür, U
    Webb-Wood, G
    Everitt, HO
    Yun, F
    Morkoç, H
    APPLIED PHYSICS LETTERS, 2001, 79 (25) : 4103 - 4105
  • [50] BEHAVIOR OF ZN AS DOPANT IN THE PHOTOLUMINESCENCE OF ALXGA1-XN
    KHAN, MRH
    KOIDE, Y
    SAWAKI, N
    AKASAKI, I
    SOLID STATE COMMUNICATIONS, 1986, 57 (01) : 17 - 20
12345