Suitability of 4H-SiC homoepitaxy for the production and development of power devices

被引：0
|
作者：
Hecht, Christian [1 ]
Thomas, Bernd [1 ]
Stein, Rene [1 ]
Friedrichs, Peter [1 ]
机构：
[1] SiCED Elect Dev GmbH & Co KG, D-91058 Erlangen, Germany
来源：
SILICON CARBIDE 2008 - MATERIALS, PROCESSING AND DEVICES | 2008年 / 1069卷
关键词：
GROWTH;
D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system VP2000HW from Epigress with a capability of processing 6x100mm wafers per run. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 6x100mm runs will be shown and compared to results of the former 7X3" setup. The characteristic of the run-to-run reproducibility for the 6x100mm setup will be discussed. To demonstrate the suitability of the reactor for device production results on Schottky Barrier Diodes (SBD) processed in the multi-wafer system will be given. Furthermore, we show results for n- and p-type SiC hornoepitaxial growth on 3", 4 degrees off-oriented substrates using a single-wafer hot-wall reactor VP508GFR from Epigress for the development of PiN-diodes with blocking voltages above 6.5 kV. Characteristics of n- and p-type epilayers and doping memory effects are discussed. 6.5 kV PiN-diodes were fabricated and electrically characterized. Results on reverse blocking behaviour, forward characteristics and drift stability will be presented.
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页码：129 / 139
页数：11
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