Suitability of 4H-SiC homoepitaxy for the production and development of power devices

被引：0

作者：

Hecht, Christian ^{[1
]}

Thomas, Bernd ^{[1
]}

Stein, Rene ^{[1
]}

Friedrichs, Peter ^{[1
]}

机构：

[1] SiCED Elect Dev GmbH & Co KG, D-91058 Erlangen, Germany

来源：

SILICON CARBIDE 2008 - MATERIALS, PROCESSING AND DEVICES | 2008年 / 1069卷

关键词：

GROWTH;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system VP2000HW from Epigress with a capability of processing 6x100mm wafers per run. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 6x100mm runs will be shown and compared to results of the former 7X3" setup. The characteristic of the run-to-run reproducibility for the 6x100mm setup will be discussed. To demonstrate the suitability of the reactor for device production results on Schottky Barrier Diodes (SBD) processed in the multi-wafer system will be given. Furthermore, we show results for n- and p-type SiC hornoepitaxial growth on 3", 4 degrees off-oriented substrates using a single-wafer hot-wall reactor VP508GFR from Epigress for the development of PiN-diodes with blocking voltages above 6.5 kV. Characteristics of n- and p-type epilayers and doping memory effects are discussed. 6.5 kV PiN-diodes were fabricated and electrically characterized. Results on reverse blocking behaviour, forward characteristics and drift stability will be presented.

引用

页码：129 / 139

页数：11

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