LOW TEMPERATURE ELECTRICAL TRANSPORT PROPERTIES IN DILUTE 2D GaAs HOLE SYSTEMS WITH MAGNETIC FIELD

被引：12

作者：

Dlimi, S. ^{[1
]}

El Kaaouachi, A. ^{[1
]}

Abdia, R. ^{[1
]}

Narjis, A. ^{[1
]}

Biskupski, G. ^{[2
]}

Hemine, J. ^{[3
]}

Limouny, L. ^{[1
]}

Sybous, A. ^{[1
]}

机构：

[1] Univ Ibn Zohr, Res Grp ESNPS, Dept Phys, Fac Sci, BP 8106, Hay Dakhla 80000, Agadir, Morocco

[2] Univ Sci & Tech Lille I, CNRS, Spect Hertzienne Lab, Equipe Semicond, F-59655 Villeneuve Dascq, France

[3] Fac Sci & Tech Mohammadia, Lab Phys Matiere Condensee, Dept Phys, Mohammadia, Morocco

来源：

ADVANCES IN CRYOGENIC ENGINEERING, VOL 58 | 2012年 / 1435卷

关键词：

Dilute 2D GaAs hole system; Electrical resistivity; Low temperature; magnetic field; Zeeman effect; Metal Insulator Transition; METAL-INSULATOR-TRANSITION; 2-DIMENSIONAL HOLES; LOCALIZATION; DIMENSIONS; SCATTERING; GAS;

D O I：

10.1063/1.4712120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low temperature dependence of resistivity is studied in strongly interacting, dilute 2D GaAs hole systems in presence of magnetic field. Electrical resistivity was analyzed showing the contributions of quantum effects to the transport mechanism. Experimental results are compared with available theoretical models, and physical arguments are given to explain the behaviour of the electrical resistivity with temperature and magnetic field.

引用

页码：385 / 392

页数：8

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