Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra

被引：31
作者：
Yue, Fangyu [1 ,2 ]
Wu, Jun [3 ]
Chu, Junhao [1 ,2 ]
机构：
[1] E China Normal Univ, Minist Educ, Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Tech Phys, Res Ctr Adv Mat & Devices, Shanghai 200083, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 13期
关键词：
D O I：
10.1063/1.2983655
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The modulated photoluminescence spectra have been performed on as-grown and in situ annealed arsenic-doped Hg(1-x)Cd(x)Te grown by molecular beam epitaxy. Besides the discussions about shallow levels including V(Hg), As(Hg), V(Hg)-As(Hg) complex, and Te(Hg), two deep levels have been observed in as-grown with an ionization energy of similar to 77.0 and similar to 95.0 meV, respectively, which can be completely eliminated by annealing and temporarily ascribed to As-related clusters or interstitials. (C) 2008 American Institute of Physics.
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共 27 条
  • [1] Arsenic incorporation during MBE growth of HgCdTe
    Berding, MA
    Sher, A
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (06) : 799 - 803
  • [2] Modeling of arsenic activation in HgCdTe
    Berding, MA
    Sher, A
    Van Schilfgaarde, M
    Chen, AC
    Arias, J
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) : 605 - 609
  • [3] 1ST PRINCIPLES CALCULATION OF NATIVE DEFECT DENSITIES IN HG0.8CD0.2TE
    BERDING, MA
    VANSCHILFGAARDE, M
    SHER, A
    [J]. PHYSICAL REVIEW B, 1994, 50 (03) : 1519 - 1534
  • [4] Arsenic activation in molecular beam epitaxy grown, in situ doped HgCdTe(211)
    Boieriu, P
    Grein, CH
    Jung, HS
    Garland, J
    Nathan, V
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (21) : 1 - 3
  • [5] ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE
    CHU, JH
    XU, SH
    TANG, DY
    [J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1064 - 1066
  • [6] First-principles study of arsenic impurity clusters in molecular beam epitaxy (MBE) grown HgCdTe
    Duan, He
    Chen, Xiaoshuang
    Huang, Yan
    Lu, Wei
    [J]. SOLID STATE COMMUNICATIONS, 2007, 143 (10) : 471 - 475
  • [7] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS
    ELLIOTT, RJ
    [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1384 - 1389
  • [8] CARRIER LOCALIZATION IN LOW-BANDGAP HG1-XCDXTE CRYSTALS, STUDIED BY PHOTOLUMINESCENCE
    FUCHS, F
    KOIDL, P
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (12C) : C71 - C75
  • [9] FOURIER-TRANSFORM PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF MEDIUM-BANDGAP HG1-XCDXTE AND INSB
    FUCHS, F
    KHENG, K
    SCHWARZ, K
    KOIDL, P
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) : S75 - S80
  • [10] Evidence that arsenic is incorporated as As4 molecules in the molecular beam epitaxial growth of Hg1-xCdxTe:As
    Garland, JW
    Grein, CH
    Yang, B
    Wijewarnasuriya, PS
    Aqariden, F
    Sivananthan, S
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (14) : 1975 - 1977
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