Characterization of photoconductive CdS thin films prepared on glass substrates for photoconductive-sensor applications

被引：42

作者：

Hur, Sung-Gi ^{[1
]}

Kim, Eui-Tae ^{[1
]}

Lee, Ji-Hong ^{[2
]}

Kim, Geun-Hong ^{[3
]}

Yoon, Soon-Gil ^{[1
]}

机构：

[1] Chungnam Natl Univ, Sch Nanosci & Technol, Taejon 305764, South Korea

[2] Chungnam Natl Univ, Dept Mechatron Engn, Taejon 305764, South Korea

[3] Agcy Def Dev, Taejon 305600, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 04期

关键词：

D O I：

10.1116/1.2945301

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cadmium sulfide (CdS) thin films with n-type semiconductor characteristics were prepared at room temperature on glass substrates by radio-frequency magnetron sputtering for photoconductive-sensor applications. Films deposited at room temperature exhibit polycrystalline phases and show smooth surface morphologies. The deposition rate of the films decreases with increasing working pressure. The dark- and photoresistances in 400-nm-thick CdS films deposited at 6.7x10(-1) Pa and 80 W were approximately 1x10(5) and 3x10(4) Omega/sq, respectively. Lowering both the dark- and photoresistances lowers the sensitivity (R-dark/R-photo) of the resistance. (c) 2008 American Vacuum Society.

引用

页码：1334 / 1337

页数：4

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