A Practical Approach to Single Event Transients Analysis For Highly Complex Designs

被引:19
作者
Alexandrescu, Dan [1 ]
Costenaro, Enrico [1 ]
Nicolaidis, Michael [2 ]
机构
[1] iRoC Technol, Grenoble, France
[2] TIMA Lab, Grenoble, France
来源
2011 IEEE INTERNATIONAL SYMPOSIUM ON DEFECT AND FAULT TOLERANCE IN VLSI AND NANOTECHNOLOGY SYSTEMS (DFT) | 2011年
关键词
Single Event Effects; Single Event Transient; accelerated fault simulation; static fault analysis; fault propagation; UPSETS;
D O I
10.1109/DFT.2011.18
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
Single Event Transients are considerably more difficult to model, simulate and analyze than the closely-related Single Event Upsets. The work environment may cause a myriad of distinctive transient pulses in various cell types that are used in widely different configurations. We present practical methods to help characterizing the standard cell library using dedicated tools and results from radiation testing. Furthermore, we analyze the SET propagation in logic networks using a standard (reference) serial fault simulation approach and an accelerated fault simulation technique, taking in account both logic and temporal considerations. The accelerated method provides similar results as the reference approach while offering a considerable increase in the simulation speed. However, the simulation approach may not be feasible for large (multi-million cells) designs that could benefit from static analysis methods. We benchmark the results of a static, probabilistic approach against the reference and accelerated methods. Finally, we discuss the integration of the SET analysis in a complete Soft Error Rate analysis flow.
引用
收藏
页码:155 / 163
页数:9
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