Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O

被引：51

作者：

Sun, SC ^{[1
]}

Chen, TF ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,DEPT ELECT ENGN,HSINCHU,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 07期

关键词：

D O I：

10.1109/55.506365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study aims to improve the electrical characteristics and reliability of low-pressure chemical vapor deposited (LPCVD) Ta2O5 films by developing a new postdeposition single-step annealing technique. Experimental results indicate that excited oxygen atoms generated by N2O decomposition can effectively repair the oxygen vacancies in the as-deposited CVD Ta2O5 film, thereby resulting in a remarkable reduction of the film's leakage current. Two other post-deposition annealing conditions are compared: rapid thermal O-2 annealing and furnace dry-O-2 annealing. The comparison reveals that RTN(2)O annealing has the lowest leakage current, superior thermal stability of electrical characteristics and the best time-dependent dielectric breakdown (TDDB) reliability.

引用

页码：355 / 357

页数：3

共 18 条

[1]

BHAT M, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P329, DOI 10.1109/IEDM.1994.383401

[2] TANTALUM OXIDE THIN-FILMS FOR DIELECTRIC APPLICATIONS BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION - PHYSICAL AND ELECTRICAL-PROPERTIES [J].

HITCHENS, WR ;

KRUSELL, WC ;

DOBKIN, DM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (09) :2615-2621

[3]

Kamiyama S., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P827, DOI 10.1109/IEDM.1991.235297

[4]

Kamiyama S., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P49, DOI 10.1109/IEDM.1993.347401

[5] EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE ANALYSIS OF THE DIFFERENCE IN LOCAL-STRUCTURE OF TANTALUM OXIDE CAPACITOR FILMS PRODUCED BY VARIOUS ANNEALING METHODS [J].

KIMURA, H ;

MIZUKI, J ;

KAMIYAMA, S ;

SUZUKI, H .

APPLIED PHYSICS LETTERS, 1995, 66 (17) :2209-2211

[6]

KOYANAGI M, 1978, IEDM, P348

[7] HIGHLY RELIABLE, HIGH-C DRAM STORAGE CAPACITORS WITH CVD TA2O5 FILMS ON RUGGED POLYSILICON [J].

LO, GQ ;

KWONG, DL ;

FAZAN, PC ;

MATHEWS, VK ;

SANDLER, N .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (05) :216-218

[8]

Numasawa Y., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P43, DOI 10.1109/IEDM.1989.74224

[9]

OKADA Y, 1994, S VLSI TECH, P105

[10]

Saitoh M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P680

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