Time-resolved scanning near-field microscopy of InGaN laser diode dynamics

被引：6
|
作者：
Schwarz, U. T. [1 ]
Lauterbach, C. [1 ]
Schillgalies, M. [2 ]
Rumbolz, C. [2 ]
Furitsch, M. [2 ]
Lell, A. [2 ]
Haerle, V. [2 ]
机构：
[1] Univ Regensburg, Inst Angew & Expt Phys, D-93040 Regensburg, Germany
[2] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany
来源：
SEMICONDUCTOR LASERS AND LASER DYNAMICS II | 2006年 / 6184卷
关键词：
InGaN laser diodes; dynamic properties; scanning near-field microscope (SNOM);
D O I：
10.1117/12.662019
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We combine a scanning near-field microscope (SNOM) with a time-resolved detection scheme to measure the mode dynamics of InGaN laser diodes emitting at 405 nm. Observed phenomena are filaments, mode competition, near-field phase dynamics, near-field to far-field propagation, and substrate modes. In this article we describe in detail the self-built SNOM, specialized for these studies. We also provide our recipe for SNOM tip preparation using tube etching. Then we compare the mode dynamics for a 3 mu m narrow and a 10 pm wide ridge waveguide laser diode.
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页数：9
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