Ab initio-based approach to initial incorporation of Bi on |GaAs(001)-c(4 x 4)α surface

被引：5

作者：

Murase, Isao ^{[1
]}

Akiyama, Toru ^{[1
]}

Nakamura, Kohji ^{[1
]}

Ito, Tomonori ^{[1
]}

机构：

[1] Mie Univ, Dept Engn Phys, Tsu, Mie 5148507, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 378卷

关键词：

Computer simulation; Phase diagrams; Surface structure; Molecular beam epitaxy; Bismuth compounds; ADSORPTION-DESORPTION BEHAVIOR; SEMICONDUCTOR SURFACES; THEORETICAL APPROACH; GROWTH; STRESS; MODEL;

D O I：

10.1016/j.jcrysgro.2012.12.047

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The initial incorporation processes of bismuth on GaAs(001)-c(4 x 4) surface are investigated by using our ab initio-based approach taking chemical potentials in the gas phase into account. The calculated surface phase diagrams obtained by comparing the adsorption energy with the gas-phase chemical potential demonstrate that the form of incorporated Bi depends on the growth conditions. The Ga-Bi dimer easily adsorbs on the missing dimer region of the c(4 x 4)alpha surface where as the Bi-Bi dimer adsorption occurs after the Ga-As dimer desorption on the surface with a Ga-Bi dimer. These results imply that the adsorption of Bi-Bi dimer accompanied with Ga-As dimer desorption is crucial for the growth process of GaAsBi on GaAs(001) substrates. (c) 2013 Elsevier B.V. All rights reserved.

引用

页码：21 / 24

页数：4

共 29 条

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