An ion-implanted standard for 11B

被引：3
作者：
Todd, ADW
Lennard, WN [1 ]
Magee, CW
Xia, H
机构：
[1] Univ Western Ontario, Dept Phys & Astron, Interface Sci Western, London, ON N6A 3K7, Canada
[2] Evans East, E Windsor, NJ 08534 USA
[3] Shandong Univ, Dept Phys, Jinan 250100, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 242卷 / 1-2期
关键词：
calibration standards; boron; ion beam analysis;
D O I：
10.1016/j.nimb.2005.08.072
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
e have prepared a B-11 ion-implanted reference sample to be used as a standard for measuring the absolute boron content of B-11-implanted Si samples. 80 keV negative (BSi)-B-11-Si-28 Molecular ions were implanted into a thick (similar to 1.7 mu m) diamond-like carbon film (deposited on a Si substrate) and the implanted Si-28 fluence was directly measured via Rutherford backscattering with a precision of +/-+/- 3% - a value that is identical for the B-11 fluence since the co-implantation process assures equal implanted fluences for both constituents of the molecule. It was confirmed that possible contamination via the molecular interference from (BSi)-B-10-Si-29 molecules was negligible. The present technique circumvents the requirement for accurate current integration during the ion implantation process. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：572 / 575
页数：4
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