A Brief Overview of Atomic Layer Deposition and Etching in the Semiconductor Processing

被引:0
作者
Yuan, Guangjie [1 ]
Wang, Ning [1 ]
Huang, Shirong [1 ]
Liu, Johan [1 ,2 ]
机构
[1] Shanghai Univ, Nanomicro Res Inst, Sch Automat & Mech Engn, SMIT Ctr, Shanghai, Peoples R China
[2] Chalmers Univ Technol, Elect Mat & Syst Lab, Dept Microtechnol & Nanosci MC2, SE-41296 Gothenburg, Sweden
来源
2016 17TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2016年
关键词
atomic layer deposition; atomic layer etching; self-limiting behavior; semiconductor processing;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Atomic layer deposition (ALD) and atomic layer etching (ALE) are two important techniques in the semiconductor processing, which focus ultra-thin film deposition and etching, respectively. Both of them have the self-limiting surface behavior, and could realize the atomic-scale fidelity in the deposition and etching processes. Unlike traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), ALD has good step coverage, atomic-scale thickness controllability, and composition uniformity at low growth temperature. Compared with traditional continuous-wave plasma etching, ALE has smooth surface, excellent depth uniformity and atomic-scale thickness controllability. In this review, their fundamental and applications have been discussed.
引用
收藏
页码:1365 / 1368
页数:4
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