Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates

被引：0
|
作者：
Astakhov, GV [1 ]
Kochereshko, VP [1 ]
Vasil'ev, DG [1 ]
Evtikhiev, VP [1 ]
Tokranov, VE [1 ]
Kudryashov, IV [1 ]
Mikhailov, GV [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 1999年 / 33卷 / 09期
基金：
俄罗斯基础研究基金会;
关键词：
Magnetic Field; GaAs; Magnetic Material; External Magnetic Field; Molecular Beam Epitaxy;
D O I：
10.1134/1.1187820
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The photoluminescence spectra in an external magnetic field of an ensemble of InAs quantum dots grown by molecular beam epitaxy on a (001) GaAs substrate with a disorientation in the [010] direction are studied. A redistribution of the photoexcited carriers among different groups of dots under the influence of the magnetic field is observed. The concentration of quantum dots is determined by analyzing the data. (C) 1999 American Institute of Physics. [S1063- 7826(99)01509-4].
引用
收藏
页码：988 / 990
页数：3
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