Matching Properties of Polycrystalline Silicon Thin-Film Transistors Studied Using Wide-Use Circuit Simulator

被引：0
作者：
Yoshida, Toshiyuki [1 ]
机构：
[1] Shimane Univ, Interdisciplinary Fac Sci & Engn, Matsue, Shimane 6908504, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 11期
关键词：
poly-Si TFT; matching property; grain boundary; SPICE; Pelgrom's model;
D O I：
10.1143/JJAP.47.8382
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A method of describing polycrystalline silicon (poly-Si) thin-film transistors (TFTs) including latitudinal grain boundaries is devised by dividing a channel region into segments. Each segment is written with one transisior. Calculations are carried out using the simulation program with integrated circuit emphasis (SPICE) level-III model. By this method, the on-current variation of grain-enhanced poly-Si TFTs can be characterized on the basis of the number of grain boundaries crossing a channel region. The variation of field effect mobility is found to follow Pelgrom's model in the long channel region, however. it shows enhanced mismatch behaviors in the short channel region. [DOI: 10.1143/JJAP.47.8382]
引用
收藏
页码：8382 / 8384
页数：3
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