Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with a novel composite channels design

被引:83
作者
Chertouk, M [1 ]
Heiss, H [1 ]
Xu, D [1 ]
Kraus, S [1 ]
Klein, W [1 ]
Bohm, G [1 ]
Trankle, G [1 ]
Weimann, G [1 ]
机构
[1] TECH UNIV MUNICH, WALTER SCHOTTKY INST, D-85748 GARCHING, GERMANY
关键词
D O I
10.1109/55.496455
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on fabrication and performance of novel 0.13 mu m T-gate metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with composite InGaAs channels, combining the superior transport properties of In(0.52)Ga(0.48)AS With low-impact ionization in the In0.32Ga0.68As subchannel, These devices exhibit excellent de characteristics, high drain currents of 750 mA/mm, extrinsic transconductances of 600 mS/mm, combined with still very low output conductance values of 20 mS/mm, and high channel and gate breakdown voltages, The use of a composite InGaAs channels leads to excellent cut-off frequencies: f(max) of 350 GHz and an f(T) 160 GHz at V-DS = 1.5 V, These are the best microwave frequency results ever reported for any FET on GaAs substrate.
引用
收藏
页码:273 / 275
页数:3
相关论文
共 6 条
  • [1] W-BAND LOW-NOISE INALAS INGAAS LATTICE-MATCHED HEMTS
    CHAO, PC
    TESSMER, AJ
    DUH, KHG
    HO, P
    KAO, MY
    SMITH, PM
    BALLINGALL, JM
    LIU, SMJ
    JABRA, AA
    [J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (01) : 59 - 62
  • [2] CHERTOUK M, 1995, P 7 INT C INP REL MA, P737
  • [3] EXTREMELY HIGH-GAIN 0.15-MU-M GATE-LENGTH INALAS/INGAAS/INP HEMTS
    HO, P
    KAO, MY
    CHAO, PC
    DUH, KHG
    BALLINGALL, JM
    ALLEN, ST
    TESSMER, AJ
    SMITH, PM
    [J]. ELECTRONICS LETTERS, 1991, 27 (04) : 325 - 327
  • [4] HIGH-QUALITY INXGA1-XAS/INALAS MODULATION-DOPED HETEROSTRUCTURES GROWN LATTICE-MISMATCHED ON GAAS SUBSTRATES
    INOUE, K
    HARMAND, JC
    MATSUNO, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 313 - 317
  • [5] LESTER LF, 1988, 1988 IEDM, P172
  • [6] PAO YC, 1991, INDIUM PHOSPHIDE AND RELATED MATERIALS : THIRD INTERNATIONAL CONFERENCE, VOLS 1 AND 2, P344, DOI 10.1109/ICIPRM.1991.147387