Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence

被引：7

作者：

Geng Chao ^{[1
,2
]}

Liu Jie ^{[1
]}

Xi Kai ^{[1
,2
]}

Zhang Zhan-Gang ^{[1
,2
]}

Gu Song ^{[1
,2
]}

Hou Ming-Dong ^{[1
]}

Sun You-Mei ^{[1
]}

Duan Jing-Lai ^{[1
]}

Yao Hui-Jun ^{[1
]}

Mo Dan ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100190, Peoples R China

来源：

CHINESE PHYSICS B | 2013年 / 22卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Geant4; multiple-bit upset (MBU); critical charge; spacing between adjacent cells; SOFT ERROR RATE; CROSS-SECTION; ION TRACKS; SIMULATION; SRAMS; SEU; BULK; SOI;

D O I：

10.1088/1674-1056/22/5/059501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate the impact of heavy ion irradiation on a hypothetical static random access memory (SRAM) device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indispensable effects on multiple-bit upsets (MBUs), and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence.

引用

页数：8

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