Graphene-based semiconductor nanostructures

被引：43
作者：
Sorokin, P. B. [1 ,2 ]
Chernozatonskii, L. A. [2 ]
机构：
[1] Technol Inst Superhard & Novel Carbon Mat, Moscow 142190, Russia
[2] Russian Acad Sci, Emanuel Inst Biochem Phys, Moscow 119334, Russia
来源：
PHYSICS-USPEKHI | 2013年 / 56卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
HEXAGONAL BORON-NITRIDE; CARBON NANOTUBES; ELECTRONIC-PROPERTIES; EPITAXIAL GRAPHENE; RAMAN-SPECTROSCOPY; REVERSIBLE HYDROGENATION; INTERCALATION COMPOUNDS; MAGNETIC-PROPERTIES; MONOLAYER GRAPHITE; HALF-METALLICITY;
D O I：
10.3367/UFNe.0183.201302a.0113
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
One of the current priorities in the physics and chemistry of graphene is the study of its semiconducting derivatives. This review summarizes the state of the art in this area of research. The structure and electronic properties of materials as such graphene ribbons, partially hydrogenated and fluorinated graphene, graphane, fluorographene, and diamane are discussed in detail.
引用
收藏
页码：105 / 122
页数：18
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