Study of breakdown effects in silicon multiguard structures

被引：35
作者：
Da Rold, M
Bacchetta, N
Bisello, D
Paccagnella, A
Dalla Betta, GF
Verzellesi, G
Militaru, O
Wheadon, R
Fuochi, PG
Bozzi, C
Dell'Orso, R
Messineo, A
Tonelli, G
Verdini, PG
机构：
[1] Univ Padua, Dipartimento Fis G Galilei, I-35131 Padua, Italy
[2] Ist Nazl Fis Nucl, Sez Padova, I-35131 Padua, Italy
[3] Univ Trento, Dipartimento Ingn Mat, I-38050 Trento, Italy
[4] Univ Padua, Dipartimento Elettron & Informat, I-35131 Padua, Italy
[5] Univ Bucharest, Bucharest, Romania
[6] NIPNE, HH, Bucharest, Romania
[7] Ist Nazl Fis Nucl, Sez Trieste, I-34127 Trieste, Italy
[8] Ist Nazl Fis Nucl, Sez Pisa, I-56010 Pisa, Italy
[9] Univ Pisa, Dipartimento Fis, Lab Fis Sperimentale, I-56010 Pisa, Italy
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1999年 / 46卷 / 04期
关键词：
avalanche breakdown; full depletion; guard ring; layout; punch-through; semiconductor junctions; silicon radiation detectors;
D O I：
10.1109/23.785736
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The purpose of this work is to study layout solutions aimed at increasing the breakdown voltage in silicon micro-strip detectors. Several structures with multiple floating guards in different configurations have been designed and produced on high- resistivity silicon wafers. The main electrical characteristics of these devices have been measured before and after irradiation. Both radiation-induced surface and bulk damage effects were considered as well. The highest breakdown voltage was found on devices featuring p(+) guards without field plates. A simulation study has been carried out on simplified structures to evaluate the distribution of the breakdown field as a function of the guard layout, The aim was the design optimization.
引用
收藏
页码：1215 / 1223
页数：9
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