Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method

被引：33

作者：

Simoes, A. Z. ^{[1
]}

Aguiar, E. C. ^{[1
]}

Gonzalez, A. H. M. ^{[1
]}

Andres, J. ^{[2
]}

Longo, E. ^{[1
]}

Varela, J. A. ^{[1
]}

机构：

[1] Univ Estadual Paulista, CEP, LIEC, Dept Fisicoquim,Inst Quim, BR-14800900 Sao Paulo, Brazil

[2] Univ Jaume 1, Dept Quim Fis & Analit, Castellon de La Plana 12071, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 10期

基金：

巴西圣保罗研究基金会;

关键词：

annealing; antiferromagnetic materials; atomic force microscopy; bismuth compounds; dielectric polarisation; ferroelectric switching; ferroelectric thin films; lanthanum compounds; leakage currents; multiferroics; piezoelectricity; platinum; Raman spectra; scanning electron microscopy; silicon; silicon compounds; titanium; X-ray diffraction;

D O I：

10.1063/1.3029658

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pure and lanthanum modified BFO (LaxBi1-xFeO3, x=0.0, 0.08, 0.15, 0.30) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the soft chemical method. The effect of La substitution on the structural and electrical properties was studied. Scanning electron microscopy, x-ray diffraction, and Raman spectroscopy have been employed to characterize the thin films while the piezoelectric measurements were carried out using a setup based on an atomic force microscope. It was found that La-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage current density and retention-free characteristics. The unipolar strain is strongly reduced by the amount of lanthanum added to the system.

引用

页数：6

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