Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces

被引：6

作者：

Huang, Hung-Wen

Chu, Jung-Tang

Kao, Chih-Chiang

Hsueh, Tao-Hung

Lu, Tien-Chang

Kuo, Hao-Chung

Wang, Shing-Chung ^{[1
]}

Yu, Chang-Chin

Kuo, Shou-Yi

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] TrueLight Corp, Hsinchu 300, Taiwan

[4] Highlink Corp, Hsinchu 300, Taiwan

[5] Instrument Technol Res Ctr, Natl Appl Res Labs, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4B期

关键词：

gallium nitride (GaN); light-emitting diode (LED); excimer laser;

D O I：

10.1143/JJAP.45.3442

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32% due to the increase in the contact area of the nanoroughened surface.

引用

收藏

页码：3442 / 3445

页数：4

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