Low sensitivity to temperature compressive-strained structure quantum well laser Ga1-xInxAs1-yNy/GaAs

被引：11
作者：
Aissat, A. [1 ]
Nacer, S. [1 ]
Bensebti, M. [1 ]
Vilcot, J. P. [2 ]
机构：
[1] Univ Saad Dahlob, Fac Engn Sci, LASICOM Lab, Blida, Algeria
[2] Univ Sci & Tech Lille Flandres Artois, UMR 8520, Inst Elect Microelect & Nanotechnol, France IEMN Lille 1, F-59652 Villeneuve Dascq, France
来源：
MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 01期
关键词：
Semiconductor; Optoelectronics; Laser diode; Strained quantum wells-Ga1-xInxAs1-yNy/GaAs; GalnNAsSb/GaAs; ELECTRON EFFECTIVE-MASS; GAINNAS;
D O I：
10.1016/j.mejo.2008.09.005
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The objective is to exploit the properties of the GaInNAs/GaAs alloy compressive strain Structure to design a laser diode likely to meet the needs of optical communications. Modelling concerns mainly the study of the potentialities of thermal stability and dynamic response offered by these new techniques of electric and optical confinement. Band structure is modelled and typical quantum well properties are illustrated. A thorough study of the structural parameters is undertaken to take into account from the design criteria the temperature sensitivity. Minimising the Auger coefficient in the order of 10(-29) cm(6)/s appears to allow achieving efficient laser diodes production. (c) 2008 Elsevier Ltd. All rights reserved
引用
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页码：10 / 14
页数：5
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