Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System)

被引:1
作者
Illarionov, Yu. Yu. [1 ,2 ]
Banshchikov, A. G. [1 ]
Sokolov, N. S. [1 ]
Wachter, S. [3 ]
Vexler, M. I. [1 ]
机构
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria
[3] Vienna Univ Technol, Inst Photon, A-1040 Vienna, Austria
关键词
SIMULATION;
D O I
10.1134/S1063785018120441
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of increasing the tunnel current in a metal-calcium fluoride-silicon structure with addition of a silicon dioxide layer between fluoride and metal (which seems paradoxical at first glance) has been considered. This effect of nonmonotonic change in the tunnel conductivity with an increase in the insulator thickness may occur at a relatively high bias at the structure and is related to the tunnel-barrier deformation, at which electrons are tunneling through its part formed by the oxide. At low biases, the occurrence/ thickening of an additional layer leads to a natural decrease in the current. Similar behavior is possible in principle for some other combinations of materials.
引用
收藏
页码:1188 / 1191
页数:4
相关论文
共 7 条
[1]  
Kar S., 2013, HIGH PERMITTIVITY GA
[2]   Improved Reproducibility in CaF2/Fe3Si/CaF2 Ferromagnetic Resonant Tunneling Diodes on Si(111) Substrates by Selected-Area Molecular Beam Epitaxy [J].
Sadakuni-Makabe, Kenji ;
Suzuno, Mitsushi ;
Harada, Kazunori ;
Akinaga, Hiro ;
Suemasu, Takashi .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (06) :0602121-0602123
[3]   Modeling and simulation of tunneling through ultra-thin gate dielectrics [J].
Schenk, A ;
Heiser, G .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) :7900-7908
[4]   Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric [J].
Tyaginov, S. E. ;
Illarionov, Yu. Yu. ;
Vexler, M. I. ;
Bina, M. ;
Cervenka, J. ;
Franco, J. ;
Kaczer, B. ;
Grasser, T. .
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2014, 13 (03) :733-738
[5]   A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures [J].
Vexler, M. I. ;
Tyaginov, S. E. ;
Illarionov, Yu Yu ;
Sing, Yew Kwang ;
Shenp, Ang Diing ;
Fedorov, V. V. ;
Isakov, D. V. .
SEMICONDUCTORS, 2013, 47 (05) :686-694
[6]   Au/CaF2/nSi(111) tunnel emitter phototransistor [J].
Vexler, M. I. ;
Illarionov, Yu. Yu. ;
Suturin, S. M. ;
Fedorov, V. V. ;
Sokolov, N. S. .
SOLID-STATE ELECTRONICS, 2011, 63 (01) :19-21
[7]   Fluoride resonant tunneling diodes on Si substrates improved by additional thermal oxidation process [J].
Watanabe, S ;
Maeda, M ;
Sugisaki, T ;
Tsutsui, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B) :2637-2641