Evaluation of Nd-Al doped indium-zinc oxide thin-film transistors by a μ-PCD method

被引：6

作者：

Chen, Jianqiu ^{[1
]}

Hu, Shiben ^{[1
]}

Ning, Honglong ^{[1
]}

Fang, Zhiqiang ^{[2
]}

Tao, Ruiqiang ^{[1
]}

Zhou, Yicong ^{[1
]}

Cai, Wei ^{[1
]}

Liu, Xianzhe ^{[1
]}

Yao, Rihui ^{[1
]}

Peng, Junbiao ^{[1
]}

机构：

[1] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China

[2] South China Univ Technol, State Key Lab Pulp & paper Engn, Guangzhou 510640, Guangdong, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2019年 / 34卷 / 05期

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

microwave photoconductivity decay; oxide semiconductor; Nd-Al doped indium-zinc oxide; thin-film transistors; SCHOTTKY; POWER; LAYER; ZNO;

D O I：

10.1088/1361-6641/ab0ec8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we investigated the effect of deposition conditions such as sputtering power, oxygen ratio and sputtering pressure on the properties of Nd-Al doped indium-zinc oxide (NAIZO) thin-film transistors based on copper (Cu) electrodes. The quality of deposited films was evaluated by introducing a microwave photoconductivity decay (mu-PCD) measurement. The results showed strong connection between sputtering conditions and mu-PCD results, which reveal that sputtering process was vital for film quality control. In addition, the tendency of obtained Peak value and D value from mu-PCD was in highly consistent with the final devices performance especially the saturation mobility. As a result, the optimized devices showed a saturation mobility of 21.4 cm(2)V(-1)S(-1), threshold voltage about 1.0 V, subthreshold swing about 0.18 V/decade and I-on/I-off ratio about 9.9 x 10(7). The non-destructive and efficient mu-PCD method offers a convenient way to optimize the deposition procedure for metal oxide semiconductors.

引用

页数：5

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