Mitsubishi Electric Develops Ku-band 50W GaN HEMT

被引:0
作者
不详
机构
来源
ELECTRONICS WORLD | 2013年 / 119卷 / 1923期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:6 / 6
页数:1
相关论文
共 50 条
[21]   Research and Application of Ku-Band 200W AlGaN/GaN Power HEMT with Four Cells Internal Matching [J].
Zhong, ShiChang ;
Chen, Tangsheng ;
Ren, Chunjiang ;
Qian, Feng ;
Chen, Chen ;
Gao, Tao .
2015 IEEE 4TH ASIA-PACIFIC CONFERENCE ON ANTENNAS AND PROPAGATION (APCAP), 2015, :510-511
[22]   A Ku-Band 100 W Power Amplifier under CW Operation Utilizing 0.15 μm GaN HEMT Technology [J].
Nagasaka, Masafumi ;
Nakazawa, Susumu ;
Tanaka, Shoji ;
Torii, Takuma ;
Imai, Shohei ;
Utsumi, Hiromitsu ;
Kono, Masaki ;
Yamanaka, Koji ;
Fukumoto, Hiroshi .
2016 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC2016), 2016,
[23]   A ku-band distributed SPDT switch in 0.5 μm AlGaN/GaN HEMT technology [J].
Zaibet, Imane ;
Hettak, Khelifa ;
Yagoub, Mustapha C. E. .
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2018, 60 (02) :462-465
[24]   A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier [J].
戈勤 ;
陈晓娟 ;
罗卫军 ;
袁婷婷 ;
庞磊 ;
刘新宇 .
半导体学报, 2011, 32 (08) :70-73
[25]   Wideband Two-Stage 50W GaN-HEMT Power Amplifier [J].
Chi Thanh Nghe ;
Maassen, Daniel ;
Zimmer, Gernot ;
Boeck, Georg .
2015 GERMAN MICROWAVE CONFERENCE, 2015, :17-20
[26]   A Hybrid Two Stage 20-W GaN HEMT Ku-Band Power Amplifier for Very Small Aperture Terminals [J].
Rautschke, Felix ;
Maassen, Daniel ;
Vehring, Soenke ;
Boeck, Georg .
2018 22ND INTERNATIONAL MICROWAVE AND RADAR CONFERENCE (MIKON 2018), 2018, :104-107
[27]   Optimization of 150 nm GaN HEMT for Ku-band applications using field plate engineering [J].
Anand, Anupama ;
Narang, Rakhi ;
Rawal, Dipendra Singh ;
Mishra, Meena ;
Saxena, Manoj ;
Gupta, Mridula .
MICRO AND NANOSTRUCTURES, 2024, 188
[28]   50W C-Band GaN MMIC Power Amplifier Design [J].
Chandrakanth, C. ;
Paul, Tuhin ;
Garg, S. K. ;
Koul, Shiban ;
Jyoti, Rajeev .
2019 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC), 2019,
[29]   60% PAE, 30W X-band and 33% PAE, 100W Ku-Band PAs utilizing 0.15μm GaN HEMT Technology [J].
Torii, Takuma ;
Imai, Shohei ;
Maehara, Hiroaki ;
Miyashita, Miyo ;
Kunii, Tetsuo ;
Morimoto, Takuo ;
Inouc, Akira ;
Ohta, Akira ;
Katayama, Hideaki ;
Yunouc, Norihiro ;
Yamanaka, Koji ;
Fukumoto, Hiroshi .
2016 46TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2016, :568-571
[30]   KU-BAND LOW-NOISE HEMT FET MIXER [J].
OKAMOTO, N ;
OKABE, K ;
MIYAZAKI, M ;
OHATA, T .
SHARP TECHNICAL JOURNAL, 1989, (43) :39-44