Multiple pulse thermal damage thresholds of materials for x-ray free electron laser optics investigated with an ultraviolet laser

被引：12

作者：

Hau-Riege, Stefan P. ^{[1
]}

London, Richard A. ^{[1
]}

Bionta, Richard M. ^{[1
]}

Soufli, Regina ^{[1
]}

Ryutov, Dmitri ^{[1
]}

Shirk, Michael ^{[1
]}

Baker, Sherry L. ^{[1
]}

Smith, Patrick M. ^{[2
]}

Nataraj, Pradeep ^{[2
]}

机构：

[1] Lawrence Livermore Natl Lab, Livermore, CA 94539 USA

[2] Kovio Inc, Sunnyvale, CA 94086 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 20期

关键词：

boron compounds; elemental semiconductors; free electron lasers; laser beam effects; silicon; ultraviolet radiation effects; X-ray optics;

D O I：

10.1063/1.3021081

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical elements to be used for x-ray free electron lasers (XFELs) must withstand multiple high-fluence pulses. We have used an ultraviolet laser to study the damage of two candidate materials, crystalline Si and B(4)C-coated Si, emulating the temperature profile expected to occur in optics exposed to XFEL pulses. We found that the damage threshold for 10(5) pulses is similar to 20% to 70% lower than the melting threshold.

引用

页数：3

共 21 条

[1]

BIONTA R, LCLSTN003

[2] THE EFFECT OF MULTIPLE LASER-PULSES ON DAMAGE TO THIN METALLIC-FILMS [J].

COHEN, SS ;

BERNSTEIN, JB ;

WYATT, PW .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) :630-637

[3] OPTICAL COATING DAMAGE AND PERFORMANCE REQUIREMENTS IN FREE-ELECTRON LASERS [J].

DEACON, DAG .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1986, 250 (1-2) :283-288

[4]

Dieter G. E., 1986, MECH METALLURGY, P90

[5]

Goldstein J. I., 2018, Scanning electron microscopy and X-ray microanalysis, V4th ed.

[6] Carrier relaxation and lattice heating dynamics in silicon revealed by femtosecond electron diffraction [J].

Harb, Maher ;

Ernstorfer, Ralph ;

Dartigalongue, Thibault ;

Hebeisen, Christoph T. ;

Jordan, Robert E. ;

Miller, R. J. Dwayne .

JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (50) :25308-25313

[7] Damage threshold of inorganic solids under free-electron-laser irradiation at 32.5 nm wavelength [J].

Hau-Riege, S. P. ;

London, R. A. ;

Bionta, R. M. ;

McKernan, M. A. ;

Baker, S. L. ;

Krzywinski, J. ;

Sobierajski, R. ;

Nietubyc, R. ;

Pelka, J. B. ;

Jurek, M. ;

Juha, L. ;

Chalupsky, J. ;

Cihelka, J. ;

Hajkova, V. ;

Velyhan, A. ;

Krasa, J. ;

Kuba, J. ;

Tiedtke, K. ;

Toleikis, S. ;

Tschentscher, Th. ;

Wabnitz, H. ;

Bergh, M. ;

Caleman, C. ;

Sokolowski-Tinten, K. ;

Stojanovic, N. ;

Zastrau, U. .

APPLIED PHYSICS LETTERS, 2007, 90 (17)

[8] Measurement of x-ray free-electron-laser pulse energies by photoluminescence in nitrogen gas [J].

Hau-Riege, S. P. ;

Bionta, R. M. ;

Ryutov, D. D. ;

Krzywinski, J. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (05)

[9] Accumulative damage of GaAs and InP surfaces induced by multiple-laser-pulse irradiation [J].

Iwata, Hiroshi ;

Asakawa, Kiyoshi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) :2161-2167

[10]

JUHA L, 2005, P SPIE, V5917

← 1 2 3 →