Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure

被引:8
|
作者
Liu, Yi [1 ]
Zhu, Kai-Gui [1 ,4 ]
Zhong, Hui-Cai [2 ]
Zhu, Zheng-Yong [3 ]
Yu, Tao [1 ]
Ma, Su-De [1 ]
机构
[1] Beihang Univ, Sch Phys & Nucl Energy Engn, Beijing 100191, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China
[3] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices Integrated Technol, Beijing 100029, Peoples R China
[4] Beihang Univ, Minist Educ, Key Lab Micronano Measurement Manipulat & Phys, Beijing 100191, Peoples R China
关键词
perpendicular magnetic anisotropy; capping layer; effective magnetic anisotropy; magnetic tunnel junction; TRANSFER TORQUE RAM; FILMS;
D O I
10.1088/1674-1056/25/11/117805
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is presented. The samples show strong perpendicular magnetic anisotropy (PMA) when the thickness of CoFeB is 0.9 nm and 1.1 nm. The saturation magnetic moment and interface anisotropy constant are 1566 emu/cm(3) and 3.75 erg/cm(2), respectively. The magnetic dead layer (MDL) is about 0.23 nm in this system. Furthermore, strong capping layer thickness dependence is also observed. The strong PMA of 1.1 nm CoFeB only exists in a Mo cap layer thickness window of 1.2-2 nm. To maintain PMA, the metal layer could not be too thin or thick in these multilayers. The oxidation and diffusion of the metal capping layer should be respectively responsibility for the degradation of PMA in these thin or thick metal capping layer samples.
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页数:5
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