Rapid photoreflectance spectroscopy for strained silicon metrology

被引：15

作者：

Chouaib, H. ^{[1
]}

Murtagh, M. E.

Guenebaut, V. ^{[1
]}

Ward, S. ^{[1
]}

Kelly, P. V. ^{[1
]}

Kennard, M. ^{[2
]}

Le Vaillant, Y. M. ^{[2
]}

Somekh, M. G. ^{[3
]}

Pitter, M. C. ^{[3
]}

Sharples, S. D. ^{[3
]}

机构：

[1] Opt Metrol Innovat Ltd, Cork Airport, Co Cork, Ireland

[2] Soitec SA, Parc Technol Fontaines, F-38190 Bernin, France

[3] Univ Nottingham, Dept Elect Engn, Nottingham NG7 2RD, England

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2008年 / 79卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

elemental semiconductors; energy gap; piezoelectricity; Raman spectra; reflectivity; silicon;

D O I：

10.1063/1.2999919

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We present an improved photoreflectance (PR) spectroscopy technique upon the prior art in providing a rapid acquisition method of the PR spectrum in a simultaneous and multiplexed manner. Rapid PR (RPR) application is the on-line monitoring of strained silicon. Shrinkage in the silicon bandgap is measured and converted to strain, using theoretical models. Experimental RPR results are in good correlation with Raman spectroscopy.

引用

页数：3

共 11 条

[1] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE
ASPNES, DE
[J]. SURFACE SCIENCE, 1973, 37 (01) : 418 - 442
[2] BIR GL, 1974, SYMMETRY SIRAIN INDU
[3] Monte Carlo stress engineering of scaled (110) and (100) bulk PMOSFETs
Bufler, F. M.
Gautschi, R.
Erlebach, A.
[J]. IEEE ELECTRON DEVICE LETTERS, 2008, 29 (04) : 369 - 371
[4] Engineering strained silicon on insulator wafers with the Smart Cut™ technology
Ghyselen, B
Hartmann, JM
Ernst, T
Aulnette, C
Osternaud, B
Bogumilowicz, Y
Abbadie, A
Besson, P
Rayssac, O
Tiberj, A
Daval, N
Cayrefourq, I
Fournel, F
Moriceau, H
Di Nardo, C
Andrieu, F
Paillard, V
Cabié, M
Vincent, L
Snoeck, E
Cristiano, F
Rocher, A
Ponchet, A
Claverie, A
Boucaud, P
Semeria, MN
Bensahel, D
Kernevez, B
Mazure, C
[J]. SOLID-STATE ELECTRONICS, 2004, 48 (08) : 1285 - 1296
[5] SYMMETRY ANALYSIS AND UNIAXIAL-STRESS EFFECT ON LOW-FIELD ELECTROREFLECTANCE OF SI FROM 3.0 TO 4.0 EV
KONDO, K
MORITANI, A
[J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1577 - 1592
[6] Mazure C, 2005, 2005 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, P1
[7] MAZURE C, 2004, IEEE ICICDT, P105
[8] Pollak F. H., 1994, HDB SEMICONDUCTORS, V2, P554
[9] Energy-band structure in strained silicon: A 20-band k-p and Bir-Pikus Hamiltonian model
Richard, S
Aniel, F
Fishman, G
Cavassilas, N
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) : 1795 - 1799
[10] Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode
Saito, Y
Motohashi, M
Hayazawa, N
Iyoki, M
Kawata, S
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (14)

← 1 2 →