Forming-free resistive switching characteristics in manganese oxide and hafnium oxide devices

被引：12

作者：

Hu, Quanli ^{[1
]}

Abbas, Haider ^{[2
]}

Kang, Tae Su ^{[2
]}

Lee, Tae Sung ^{[2
]}

Lee, Nam Joo ^{[2
]}

Park, Mi Ra ^{[2
]}

Yoon, Tae-Sik ^{[3
]}

Ki, Jaewan ^{[2
]}

Kan, Chi Jung ^{[2
]}

机构：

[1] Inner Mongolia Univ Nationalities, Coll Chem & Chem Engn, Nano Innovat Inst, Inner Mongolia Key Lab Carbon Nanomat, Tongliao 028000, Peoples R China

[2] Myongji Univ, Dept Phys, Gyeonggi Do 17058, South Korea

[3] Myongji Univ, Dept Mat Sci & Engn, Gyeonggi Do 17058, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / 04期

关键词：

RANDOM-ACCESS MEMORY; CHARGE;

D O I：

10.7567/1347-4065/ab01f8

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resistive switching properties of hafnium oxide and manganese oxide double-layer films sandwiched between Pt bottom electrode and Ag top electrode have been investigated. The devices exhibited bipolar resistive switching. As compared with the devices with hafnium oxide and manganese oxide single layer, the double-layered devices showed better resistive switching behaviors, including forming-free behavior, a high resistance ratio (>10(5-6) ), and good retention properties. The forming-free behavior of the bilayer device is very useful for resistive random access memory applications. The high resistance ratio is beneficial to distinguish the storage information. The formation and disruption of Ag conductive filament in the oxide layers led to the resistance changes. (C) 2019 The Japan Society of Applied Physics

引用

页数：6

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