Fabrication of P-Type ZnO:N Film by Radio-Frequency Magnetron Sputtering for Extremely Thin Absorber Solar Cell Applications

被引：5

作者：

Wang Xiang-Hu ^{[1
]}

Li Rong-Bin ^{[1
]}

Fan Dong-Hua ^{[2
]}

机构：

[1] Shanghai Dianji Univ, Sch Mech Engn, Shanghai 200240, Peoples R China

[2] Wuyi Univ, Sch Appl Phys & Mat, Jiangmen 529020, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2013年 / 30卷 / 03期

基金：

上海市自然科学基金; 中国国家自然科学基金;

关键词：

OPTICAL-PROPERTIES; SUBSTRATE; TEMPERATURE; REALIZATION; DEFECTS; SILICON;

D O I：

10.1088/0256-307X/30/3/037202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We successfully fabricate p-type ZnO:N films by using rf magnetron sputtering and in situ annealing in O-2 atmosphere. These p-type ZnO:N films can be used as p-type window materials for extremely thin absorber (ETA) solar cells composed of quartz glass/p-ZnO:N/i-ZnO/CdSe/i-ZnO/n-ZnO:Al. The short-circuit photocurrent density, open circuit voltage, fill factor and conversion efficiency of the ETA solar cells can be determined to be 8.549 mA/cm(2), 0.702 V, 0.437 and 2.623%, respectively, through measurements of photovoltaic properties under illumination with a 100mW/cm(2) at air-mass (AM) 1.5.

引用

页数：4

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