A threshold voltage simulation of hydrogen-terminated diamond MESFETs

被引：1

作者：

Zhuang, Xiaofeng ^{[1
]}

Zeng, Qingkai ^{[1
]}

Ren, Bing ^{[1
]}

Wang, Zhenhua ^{[1
]}

Zhang, Yuelu ^{[1
]}

Shen, Liya ^{[1
]}

Bi, Mei ^{[1
]}

Huang, Jian ^{[1
]}

Tang, Ke ^{[1
]}

Shi, Lingyun ^{[1
]}

Xia, Yiben ^{[1
]}

Wang, Linjun ^{[1
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China

来源：

ADVANCED COMPOSITE MATERIALS, PTS 1-3 | 2012年 / 482-484卷

关键词：

threshold voltage; diamond; hydrogen-terminated; Silvaco TCAD; ELECTRONICS;

D O I：

10.4028/www.scientific.net/AMR.482-484.1093

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

In this paper, the threshold voltage of diamond film-based metal-semiconductor field effect transistors (MESFETs) has been simulated using Silvaco TCAD tools. The drain current (I-d) versus gate voltage (V-g) relationship, and the distribution of acceptors in diamond surface conduction layer were also investigated. From the simulation results, it was found that the gate length contributed the most to the threshold voltage, while the doping depth almost had no impact on the threshold voltage value.

引用

页码：1093 / 1096

页数：4

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