Suppression of Mg propagation into subsequent layers grown by MOCVD

被引：24

作者：

Agarwal, Anchal ^{[1
]}

Tahhan, Maher ^{[1
]}

Mates, Tom ^{[2
]}

Keller, Stacia ^{[1
]}

Mishra, Umesh ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2017年 / 121卷 / 02期

关键词：

CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTORS; FLOW MODULATION EPITAXY; MOLECULAR-BEAM EPITAXY; GAN; ACTIVATION; GAAS;

D O I：

10.1063/1.4972031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low temperature (LT) flow modulation epitaxy (FME) or "pulsed" growth was successfully used to prevent magnesium from Metalorganic Chemical Vapor Deposition (MOCVD) grown p-GaN:Mg layers riding into subsequently deposited n-type layers. Mg concentration in the subsequent layers was lowered from similar to 1 x 10(18) cm(-3) for a medium temperature growth at 950 degrees C to similar to 1 x 10(16) cm(-3) for a low temperature growth at 700 degrees C via FME. The slope of the Mg concentration drop in the 700 degrees C FME sample was 20 nm/dec-the lowest ever demonstrated by MOCVD. For growth on Mg implanted GaN layers, the drop for a medium temperature regrowth at 950 degrees C was similar to 10 nm/dec compared to >120 nm/dec for a high temperature regrowth at 1150 degrees C. This drop-rate obtained at 950 degrees C or lower was maintained even when the growth temperature in the following layers was raised to 1150 degrees C. A controlled silicon doping series using LT FME was also demonstrated with the lowest and highest achieved doping levels being 5 x 10(16) cm(-3) and 6 x 10(19) cm(-3), respectively. Published by AIP Publishing.

引用

页数：6

共 24 条

[1] Activation of Mg implanted in GaN by multicycle rapid thermal annealing [J].

Anderson, T. J. ;

Feigelson, B. N. ;

Kub, F. J. ;

Tadjer, M. J. ;

Hobart, K. D. ;

Mastro, M. A. ;

Hite, J. K. ;

Eddy, C. R., Jr. .

ELECTRONICS LETTERS, 2014, 50 (03) :197-198

[2]

[Anonymous], 2000, BLUE LASER DIODE COM

[3] AlGaN/GaN current aperture vertical electron transistors with regrown channels [J].

Ben-Yaacov, I ;

Seck, YK ;

Mishra, UK ;

DenBaars, SP .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (04) :2073-2078

[4] High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts [J].

Chen, CH ;

Keller, S ;

Parish, G ;

Vetury, R ;

Kozodoy, P ;

Hu, EL ;

Denbaars, SP ;

Mishra, UK ;

Wu, YF .

APPLIED PHYSICS LETTERS, 1998, 73 (21) :3147-3149

[5] Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer [J].

Chowdhury, Srabanti ;

Swenson, Brian L. ;

Mishra, Umesh K. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (06) :543-545

[6] Use of Sub-nanometer Thick AlN to Arrest Diffusion of Ion-Implanted Mg into Regrown AlGaN/GaN Layers [J].

Chowdhury, Srabanti ;

Swenson, Brian L. ;

Lu, Jing ;

Mishra, Umesh K. .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (10)

[7] Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN [J].

Feigelson, B. N. ;

Anderson, T. J. ;

Abraham, M. ;

Freitas, J. A. ;

Hite, J. K. ;

Eddy, C. R. ;

Kub, F. J. .

JOURNAL OF CRYSTAL GROWTH, 2012, 350 (01) :21-26

[8] High Si and Ge n-type doping of GaN doping - Limits and impact on stress [J].

Fritze, S. ;

Dadgar, A. ;

Witte, H. ;

Buegler, M. ;

Rohrbeck, A. ;

Blaesing, J. ;

Hoffmann, A. ;

Krost, A. .

APPLIED PHYSICS LETTERS, 2012, 100 (12)

[9]

GOTZ W, 1995, APPL PHYS LETT, V67, P2666, DOI 10.1063/1.114330

[10] Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties [J].

Greenlee, Jordan D. ;

Feigelson, Boris N. ;

Anderson, Travis J. ;

Tadjer, Marko J. ;

Hite, Jennifer K. ;

Mastro, Michael A. ;

Eddy, Charles R., Jr. ;

Hobart, Karl D. ;

Kub, Francis J. .

JOURNAL OF APPLIED PHYSICS, 2014, 116 (06)

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