Suppression of Mg propagation into subsequent layers grown by MOCVD

被引：24

作者：

Agarwal, Anchal ^{[1
]}

Tahhan, Maher ^{[1
]}

Mates, Tom ^{[2
]}

Keller, Stacia ^{[1
]}

Mishra, Umesh ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2017年 / 121卷 / 02期

关键词：

CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTORS; FLOW MODULATION EPITAXY; MOLECULAR-BEAM EPITAXY; GAN; ACTIVATION; GAAS;

D O I：

10.1063/1.4972031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low temperature (LT) flow modulation epitaxy (FME) or "pulsed" growth was successfully used to prevent magnesium from Metalorganic Chemical Vapor Deposition (MOCVD) grown p-GaN:Mg layers riding into subsequently deposited n-type layers. Mg concentration in the subsequent layers was lowered from similar to 1 x 10(18) cm(-3) for a medium temperature growth at 950 degrees C to similar to 1 x 10(16) cm(-3) for a low temperature growth at 700 degrees C via FME. The slope of the Mg concentration drop in the 700 degrees C FME sample was 20 nm/dec-the lowest ever demonstrated by MOCVD. For growth on Mg implanted GaN layers, the drop for a medium temperature regrowth at 950 degrees C was similar to 10 nm/dec compared to >120 nm/dec for a high temperature regrowth at 1150 degrees C. This drop-rate obtained at 950 degrees C or lower was maintained even when the growth temperature in the following layers was raised to 1150 degrees C. A controlled silicon doping series using LT FME was also demonstrated with the lowest and highest achieved doping levels being 5 x 10(16) cm(-3) and 6 x 10(19) cm(-3), respectively. Published by AIP Publishing.

引用

页数：6

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