Room temperature ferromagnetism in magnetron sputtering prepared Mn-doped ZnO thin films

被引:10
作者
Zhang, Yu [1 ]
Okamoto, Junpei [1 ]
Nasu, Naho [1 ]
Zhao, Xinwei [1 ,2 ]
机构
[1] Tokyo Univ Sci, Shinjuku Ku, Tokyo 1628601, Japan
[2] Tianjin Univ Technol & Educ, Tianjin 300222, Peoples R China
关键词
EXCHANGE; MODEL;
D O I
10.7567/JJAP.54.06FJ08
中图分类号
O59 [应用物理学];
学科分类号
摘要
Room temperature ferromagnetism has been observed in Mn-doped ZnO thin films using radio frequency magnetron sputtering. X-ray diffraction measurements show that the samples possess wurtize structures without secondary phases. Magnetization loops for Mn-doped ZnO thin film which deposited at 300 degrees C and annealed in O-2 atmosphere at 500 degrees C were measured at 300K and show ferromagnetic behaviour. In our study, the result shows that it is the substitutional Mn2+ ions that make the ferromagnetic ordering in Mn doped ZnO thin films. Ferromagentic ordering becomes weaker at higher concentration of oxygen vacancy. (C) 2015 The Japan Society of Applied Physics
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页数:3
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