Room temperature ferromagnetism in magnetron sputtering prepared Mn-doped ZnO thin films

被引：10

作者：

Zhang, Yu ^{[1
]}

Okamoto, Junpei ^{[1
]}

Nasu, Naho ^{[1
]}

Zhao, Xinwei ^{[1
,2
]}

机构：

[1] Tokyo Univ Sci, Shinjuku Ku, Tokyo 1628601, Japan

[2] Tianjin Univ Technol & Educ, Tianjin 300222, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 06期

关键词：

EXCHANGE; MODEL;

D O I：

10.7567/JJAP.54.06FJ08

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature ferromagnetism has been observed in Mn-doped ZnO thin films using radio frequency magnetron sputtering. X-ray diffraction measurements show that the samples possess wurtize structures without secondary phases. Magnetization loops for Mn-doped ZnO thin film which deposited at 300 degrees C and annealed in O-2 atmosphere at 500 degrees C were measured at 300K and show ferromagnetic behaviour. In our study, the result shows that it is the substitutional Mn2+ ions that make the ferromagnetic ordering in Mn doped ZnO thin films. Ferromagentic ordering becomes weaker at higher concentration of oxygen vacancy. (C) 2015 The Japan Society of Applied Physics

引用

页数：3

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