20-nm-gate-length erbium-/platinum-silicided n-/p-type Schottky barrier metal-oxide-semiconductor field-effect transistors

被引：10

作者：

Jang, Moongyu ^{[1
]}

Choi, Cheljong ^{[2
]}

Lee, Seongjae ^{[3
,4
]}

机构：

[1] Elect & Telecommun Res Inst, IT Convergence Technol Res Div, Taejon 305700, South Korea

[2] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 561756, South Korea

[3] Hanyang Univ, Quantum Photon Sci Res Ctr, Seoul 133791, South Korea

[4] Hanyang Univ, Program BK21, Div Adv Res & Educ Phys, Seoul 133791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 19期

关键词：

erbium; leakage currents; MOSFET; platinum compounds; Schottky barriers;

D O I：

10.1063/1.3025726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

20-nm-gate-length erbium-/platinum-silicided n-/p-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 20-nm-gate-length n-/p-type SB-MOSFETs showed large on/off current ratio (>10(6)) with low leakage current less than 10(-5) mu A/mu m due to the existence of the Schottky barrier between source and channel region. The saturation currents were 550 and -376 mu A/mu m when drain and gate voltages are 2/-2 and 3/-3 V, for the n-/p-type SB-MOSFET, respectively.

引用

页数：3

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