Ambipolar TFET;
asymmetric TFET;
band-to-band tunneling;
frequency multiplier;
mixer;
D O I:
10.1109/LED.2012.2214201
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This letter proposes a novel application of asymmetric (double-gate) tunnel field-effect transistors (asymmetric TFETs) as a frequency multiplier. Work-function tuning of an asymmetric TFET was used to demonstrate symmetric ambipolar transfer characteristics by TCAD simulation. Unlike the conventional balanced FET-based multiplier, the asymmetric TFET design needs only one transistor for rejecting odd harmonics. Advanced design system simulations are used to compare the performance of an n-type FET and an asymmetric TFET frequency multiplier.
引用
收藏
页码:1547 / 1549
页数:3
相关论文
共 6 条
[1]
Avci U. E., 2011, 2011 IEEE Symposium on VLSI Technology. Digest of Technical Papers, P124