Asymmetric Tunnel Field-Effect Transistors as Frequency Multipliers

被引:23
作者
Madan, Himanshu [1 ]
Saripalli, Vinay [1 ]
Liu, Huichu [1 ]
Datta, Suman [1 ]
机构
[1] Penn State Univ, University Pk, PA 16802 USA
关键词
Ambipolar TFET; asymmetric TFET; band-to-band tunneling; frequency multiplier; mixer;
D O I
10.1109/LED.2012.2214201
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter proposes a novel application of asymmetric (double-gate) tunnel field-effect transistors (asymmetric TFETs) as a frequency multiplier. Work-function tuning of an asymmetric TFET was used to demonstrate symmetric ambipolar transfer characteristics by TCAD simulation. Unlike the conventional balanced FET-based multiplier, the asymmetric TFET design needs only one transistor for rejecting odd harmonics. Advanced design system simulations are used to compare the performance of an n-type FET and an asymmetric TFET frequency multiplier.
引用
收藏
页码:1547 / 1549
页数:3
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