A Novel High-Voltage (> 600 V) LDMOSFET With Buried N-Layer in Partial SOI Technology

被引：27
作者：
Hu, Yue [1 ]
Huang, Qijun [1 ]
Wang, Gaofeng [2 ]
Chang, Sheng [1 ]
Wang, Hao [1 ]
机构：
[1] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Inst Microelect & Informat Technol, Wuhan 430072, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 04期
基金：
中国国家自然科学基金;
关键词：
Breakdown voltage (BV); buried N-type layer (BNL); lateral double-diffused metal-oxide-semiconductor (LDMOS); ON-resistance (R-on); partial silicon-on-insulator (PSOI); DEVICES; TRANSISTOR;
D O I：
10.1109/TED.2012.2185498
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with a buried N-type layer (BNL) in partial silicon-on-insulator (PSOI) is introduced to achieve breakdown voltage (BV) above 600 V and reduce ON-resistance (R-on). The BNL induces enhanced voltage into the buried oxide layer, which results in higher BV. The higher doping concentration in the BNL can provide more electrons to support higher current and thus reduce ON-resistance. The proposed LDMOS transistor with a BNL in PSOI (BNL-PSOI) is analyzed and compared with LDMOS transistors with conventional SOI (CSOI), conventional PSOI (CPSOI), and a BNL in SOI (BNL-SOI) by 2-D numerical simulations. The results indicate that the proposed structure can significantly improve BV up to 660 V and reduce ON-resistance by 13.6%-15.5% in comparison to CSOI and CPSOI.
引用
收藏
页码：1131 / 1136
页数：6
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