Multiphysics Modeling of RF and Microwave High-Power Transistors

被引：24

作者：

Aaen, Peter H. ^{[1
]}

Wood, John

Bridges, Daren ^{[1
]}

Zhang, Lei ^{[1
]}

Johnson, Eric ^{[1
]}

Pla, Jaime A. ^{[1
]}

Barbieri, Travis ^{[1
]}

Snowden, Christopher M. ^{[2
]}

Everett, John P. ^{[2
]}

Kearney, Michael J. ^{[2
]}

机构：

[1] Freescale Semicond Inc, RF Div, Tempe, AZ 85284 USA

[2] Univ Surrey, Fac Engn & Phys Sci, Guildford GU2 7XH, Surrey, England

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2012年 / 60卷 / 12期

关键词：

Electrothermal; global modeling; laterally diffused metal-oxide-semiconductor (LDMOS) transistor; power field-effect transistor (FET); DESIGN;

D O I：

10.1109/TMTT.2012.2224366

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a multiphysics approach for the simulation of high-power RF and microwave transistors, in which electromagnetic, thermal, and nonlinear transistor models are linked together within a harmonic-balance circuit simulator. This approach is used to analyze a laterally diffused metal-oxide-semiconductor (LDMOS) transistor that has a total gate width of 102 mm and operates at 2.14 GHz. The transistor die is placed in a metal-ceramic package, with bond-wire arrays connecting the die to the package leads. The effects of three different gate bond-pad layouts on the transistor efficiency are studied. Through plots of the spatial distributions of the drain efficiency and the time-domain currents and voltages across the die, we reveal for the first time unique interactions between the electromagnetic effects of the layout and the microwave behavior of the large-die LDMOS power field-effect transistor.

引用

页码：4013 / 4023

页数：11

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