Effect of radio frequency power on the properties of p-type SnO deposited via sputtering

被引：32
|
作者：
Um, Joseph [1 ]
Roh, Byeong-Min [2 ]
Kim, Sungdong [3 ]
Kim, Sarah Eunkyung [1 ]
机构：
[1] Seoul Natl Univ Sci & Technol, Grad Sch NID Fus Technol, Seoul 139743, South Korea
[2] Seoul Natl Univ Sci & Technol, Dept Ind & Informat Syst Engn, Seoul 139743, South Korea
[3] Seoul Natl Univ Sci & Technol, Dept Mech Syst Design, Seoul 139743, South Korea
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 06期
基金：
新加坡国家研究基金会;
关键词：
Oxide semiconductor; rf power; Sputtering; Tin oxide; THIN-FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; REFRACTIVE-INDEX; OXIDE;
D O I：
10.1016/j.mssp.2013.03.009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
P-type SnO thin films were fabricated via radio frequency (rf) reactive magnetron sputtering on borosilicate substrates, with an Sn target and Ar/O-2 gas mixture. As the rf power increased, the structural defects were formed in SnO thin films lowering the optical absorption edge. It was found that the SnO thin films showed a short-range ordered crystalline structure and the crystallinity was slightly improved as the rf power increased. The electrical conductivity of SnO thin films was increased as the rf power increased and at 300 W, the conductivity was 0.048 (Omega cm)(-1), but it exhibited the very poor mobility of 0.02 cm(2)/Vs. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1679 / 1683
页数：5
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